PART |
Description |
Maker |
MJF122-D MJF127 |
Complementary Power Darlingtons For Isolated Package Applications Power 5A 100V Darlington NPN Power 5A 100V PNP
|
ON Semiconductor
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IRFL9110 IRFL9110TR |
-100V Single P-Channel HEXFET Power MOSFET in a SOT-223 package Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-1.1A)
|
IRF[International Rectifier]
|
IRHG7110 |
100V, 4 N-Channel Thru-Hole Radiation Hardened Power MOSFET(100V,通孔安装抗辐射功率四N沟道MOSFET)
|
International Rectifier
|
IRF510S IRF510STRL IRF510STRR |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A)
|
IRF[International Rectifier]
|
IRF5NJ9540 IRF5NJB9540 |
-100V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package SURFACE MOUNT (SMD-0.5) 100V, P-CHANNEL POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A)
|
International Rectifier
|
IRFD9120 |
-100V Single P-Channel HEXFET Power MOSFET in a HEXDIP package Power MOSFET(Vdss=-100V, Rds(on)=0.60ohm, Id=-1.0A) Power MOSFET(Vdss=-100V Rds(on)=0.60ohm Id=-1.0A) HEXFET? Power MOSFET Power MOSFET(Vdss=-100V/ Rds(on)=0.60ohm/ Id=-1.0A)
|
IRF[International Rectifier]
|
BDW93A BDW94A BDW93 BDW93B BDW93C BDW94 BDW94B BDW |
POWER TRANSISTORS(12A,45-100V,80W) 功率晶体管(2A ,45 - 100V的,80瓦) RJZ Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 05V; Output Voltage (Vdc): 12V; Power: 2W; 2W Single and Dual Outputs POWER TRANSISTORS(12A/45-100V/80W) POWER TRANSISTORS(12A45-100V80W)
|
Mospec Semiconductor, Corp. MOSPEC SEMICONDUCTOR CORP. MOSPEC[Mospec Semiconductor]
|
BUZ72L BUZ72LC67078-S1327-A2 BUZ72LSMD |
Power MOSFET, 100V, D²PAK , RDSon=0.2 Ohm, 10A, LL Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=0.2 Ohm, 10A, LL SIPMOS Power Transistor Single-coil dual-output step-down DC/DC converter for digital base band and multimedia processor supply SIPMOS Power Transistor
|
Infineon Technologies AG
|
IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements 100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package -100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package RADIATION HARDENED POWER MOSFET 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY 1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
IRFP4710 IRFP4710PBF |
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Power MOSFET(Vdss=100V, Rds(on)max=0.014ohm, Id=72A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rdson)最大值\u003d 0.014ohm,身份证\u003d 72A条)
|
IR International Rectifier, Corp.
|
BUZ21 BUZ21SMD |
Low Voltage MOSFETs - Power MOSFET, 100V,DPAK , RDSon=0.085 Ohm, 21A, NL Power MOSFET, 100V,D²PAK , RDSon=0.085 Ohm, 21A, NL SIPMOS Power Transistor
|
Infineon Technologies AG
|